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參數(shù)資料
| 型號： | BSR14 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 49K |
| 代理商： | BSR14 |
Electrical Characteristics
TA = 25
°
C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10
μ
A, I
B
= 0
75
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 60 V
V
CB
= 60 V, T
A
= 150
°
C
V
CE
= 60 V, V
EB
= 3.0 V
V
CE
= 60 V, V
EB
= 3.0 V
V
EB
= 3.0 V, I
C
= 0
40
6.0
V
V
nA
μ
A
nA
nA
nA
10
10
10
20
15
I
CEX
I
BEX
I
EBO
Collector-Cutoff Current
Reverse Base Current
Emitter-Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
75
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.3
1.0
1.2
2.0
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.6
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 20,
f = 100 mHz
V
CB
= 10V, I
E
= 0, f = 1.0 MHz
V
CE
=10V,I
C
=1.0 mA,f=1.0 kHz
V
CE
=10V,I
C
=1.0 mA,f=1.0 kHz
V
CE
=10V,I
C
=1.0 mA,f=1.0 kHz
300
MHz
C
CB
h
ie
h
fe
h
oe
Collector-Base Capacitance
Input Impedance
Small-Signal Current Gain
Output Admittance
8.0
8.0
300
35
pF
k
2.0
50
5
μ
S
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
10
25
225
60
ns
ns
ns
ns
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6
Vtf=1.7 Xtf=3 Rb=10)
NPN General Purpose Amplifier
(continued)
B
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|---|---|
| BSR14,215 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 40V 0.8A 3-Pin RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BSR14 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-23 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR, NPN, 40V |
| BSR14/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SCHALT SMD KLEINSIGNAL |
| BSR14_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier |
| BSR14_D87Z | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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