參數(shù)資料
型號： BSPD25N06S2-40
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 29A I(D) | TO-252AA
中文描述： 晶體管| MOSFET的| N溝道| 55V的五（巴西）直|第29A條（?。﹟對252AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 587K
代理商： BSPD25N06S2-40
2002-06-10
Page 2
SPD25N06S2-40
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
1.45
2.2
K/W
Thermal resistance, junction - ambient, leaded
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
2)
-
-
-
-
75
50
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=26μA
Zero gate voltage drain current
V
(BR)DSS
55
-
-
V
V
GS(th)
2.1
3
4
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V,
T
j
=125°C
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=13A
R
DS(on)
-
30
40
m
1Defined by design. Not subject to production test.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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