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參數(shù)資料
| 型號： | BSP752-T |
| 英文描述： | Ultra Low Capacitance Transient Voltage Suppressor Diodes |
| 中文描述： | ？200mΩ。 6 - 52V的1.3a標準。的P - DSO的- 8？ |
| 文件頁數(shù)： | 4/17頁 |
| 文件大?。?/td> | 231K |
| 代理商： | BSP752-T |
2000-03-07
Page 4
BSP 752 R
Electrical Characteristics
Parameter and Conditions
Symbol
Values
typ.
Unit
DW
7
M
&
Load Switching Capabilities and Characteristics
On-state resistance
T
j
= 25 °C,
I
L
= 1 A,
V
bb
= 9...52 V
T
j
= 150 °C
Nominal load current; Device on PCB
1)
T
C
= 85 °C,
T
j
￡
150 °C
Turn-on time to 90%
V
OUT
R
L
= 47
W
Turn-off time to 10%
V
OUT
R
L
= 47
W
Slew rate on 10 to 30% V
OUT
,
R
L
= 47
W
,
V
bb
= 13.5 V
Slew rate off 70 to 40% V
OUT
,
R
L
= 47
W
,
V
bb
= 13.5 V
9
EE
9
XQOHVVRWKHUZLVHVSHFLILHG
min.
max.
R
ON
-
-
150
270
200
380
m
W
I
L(nom)
1.3
1.7
-
A
t
on
-
80
180
μs
t
off
-
80
200
dV/dt
on
-
0.7
2
V/μs
-dV/dt
off
-
0.9
2
Operating Parameters
Operating voltage
Undervoltage shutdown of charge pump
T
j
= -40...+85 °C
T
j
= 150 °C
Undervoltage restart of charge pump
Standby current
T
j
= -40...+85 °C,
V
IN
= low
T
j
= +150 °C
2)
,
V
IN
= low
Leakage output current (included in
I
bb(off)
)
V
IN
= low
Operating current
V
IN
= high
V
bb(on)
V
bb(under)
6
-
-
-
-
-
52
4
5.5
V
V
bb(u cp)
I
bb(off)
-
-
-
4
-
-
5.5
15
18
μA
I
L(off)
-
-
5
I
GND
-
0.8
2
mA
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70μm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2higher current due temperature sensor
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