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參數(shù)資料
| 型號(hào)： | BSP152 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 0.55 A, 200 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | BSP152 |
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP152
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1.
Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 mm
2
.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature
operating junction temperature
200
40
550
3
1.5
+150
150
V
V
mA
A
W
°
C
°
C
open drain
up to T
amb
= 25
°
C; note 1
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient; note 1
83.3 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
100
MAX. UNIT
100
3.5
2.5
100
V
(BR)DSS
±
I
GSS
V
GS(th)
R
DS(on)
I
DSS
|
Y
fs
|
C
iss
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
drain-source leakage current
transfer admittance
input capacitance
I
D
= 10
μ
A; V
GS
= 0
±
V
GS
= 40 V; V
DS
= 0
I
D
= 1 mA; V
DS
= V
GS
I
D
= 750 mA; V
GS
= 10 V
V
DS
= 160 V; V
GS
= 0
I
D
= 750 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0;
200
1.5
400
V
nA
V
nA
mS
pF
f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
V
DS
= 25 V; V
GS
= 0; f = 1 MHz
C
oss
C
rss
output capacitance
feedback capacitance
42
8
pF
pF
Switching times (see Figs
2
and
3
)
t
on
turn-on time
I
D
= 750 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 750 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
15
ns
t
off
turn-off time
30
ns
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