Ordering Information" />
參數(shù)資料
型號(hào): BSO615CT
廠商: Infineon Technologies
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 0K
描述: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
其它圖紙: SO-8 Dual
標(biāo)準(zhǔn)包裝: 1
系列: SIPMOS®
FET 型: N 和 P 溝道
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 60V
電流 - 連續(xù)漏極(Id) @ 25° C: 3.1A,2A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 110 毫歐 @ 3.1A,10V
Id 時(shí)的 Vgs(th)(最大): 2V @ 20µA
閘電荷(Qg) @ Vgs: 22.5nC @ 10V
輸入電容 (Ciss) @ Vds: 380pF @ 25V
功率 - 最大: 2W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: PG-DSO-8
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁(yè)面: 1619 (CN2011-ZH PDF)
其它名稱: BSO615CXTINDKR
2
SY10H607
SY100H607
Micrel, Inc.
M9999-032906
hbwhelp@micrel.com or (408) 955-1690
PACKAGE/ORDERING INFORMATION
Ordering Information(1)
Package
Operating
Package
Lead
Part Number
Type
Range
Marking
Finish
SY10H607JC
J28-1
Commercial
SY10H607JC
Sn-Pb
SY10H607JCTR(2)
J28-1
Commercial
SY10H607JC
Sn-Pb
SY100H607JC
J28-1
Commercial
SY100H607JC
Sn-Pb
SY100H607JCTR(2)
J28-1
Commercial
SY100H607JC
Sn-Pb
SY10H607JZ(3)
J28-1
Commercial
SY10H607JZ with
Matte-Sn
Pb-Free bar-line indicator
SY10H607JZTR(2, 3)
J28-1
Commercial
SY10H607JZ with
Matte-Sn
Pb-Free bar-line indicator
SY100H607JZ(3)
J28-1
Commercial
SY100H607JZ with
Matte-Sn
Pb-Free bar-line indicator
SY100H607JZTR(2, 3)
J28-1
Commercial
SY100H607JZ with
Matte-Sn
Pb-Free bar-line indicator
Notes:
1. Contact factory for die availability. Dice are guaranteed at T
A = 25°C, DC Electricals only.
2. Tape and Reel.
3. Pb-Free package is recommended for new designs.
28-Pin PLCC (J28-1)
18
17
16
15
14
13
12
56789
10 11
26
27
28
1
2
3
4
TOP VIEW
PLCC
25 24 23 22 21 20 19
Q
4
TGND
Q
5
V
CCT
Q
3
V
CCT
MR
Q2
Q1
Q0
CLK
VBB
TGND
CLK
D
1
D
2
D
0
EGND
D
0
D
1
D
2
D5
D4
VCCE
D3
D4
D5
相關(guān)PDF資料
PDF描述
FXO-LC735R-29.5 OSC 29.5 MHZ 3.3V LVDS SMD
445A31J16M00000 CRYSTAL 16.000000 MHZ 9PF SMD
ET01M3D1SAKE SWITCH TOGGLE TINY R/A SEALED
445A31J14M31818 CRYSTAL 14.318180 MHZ 9PF SMD
445A31J13M00000 CRYSTAL 13.000000 MHZ 9PF SMD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BSO615N 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:SIPMOS® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道(雙) FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A,10V Id 時(shí)的 Vgs(th)(最大):3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
BSO615N G 功能描述:MOSFET SIPMOS Sm-Signal TRANSISTOR 60V 2.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BSO615NG 制造商:Infineon Technologies AG 功能描述:MOSFET Dual N-Ch 60V 2.6A Logic SOIC8
BSO615NGHUMA1 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 60V 2.6A 8-Pin SO 制造商:Infineon Technologies AG 功能描述:N-KANAL SMALL SIGNAL MOS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC
BSO615NGXT 制造商:Infineon Technologies AG 功能描述:TRANS MOSFET N-CH 60V 2.6A 8PIN DSO - Cut TR (SOS)