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參數(shù)資料
| 型號： | BSO615C |
| 元件分類： | 開關(guān) |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 525K |
| 代理商： | BSO615C |
A-82
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Fully sealed - matt black
A
Straight PC terminals - four pole L
Straight PC terminals - three pole L
Straight PC terminals - double pole L
I
II
III
12246 X778
ON
-
ON
I
II
III
12256 X778
ON
-ON
I
II
III
12266 X778
ON
-
ON
PANEL CUT
-OUT
STANDARD HARDWARE
Hex nut
U41
(matt black)
Positions and connections, see next page.
L
Models with straight PC terminals are also available with 3,5 mm (.138) short
terminals, functions 6, 9, 7 and 8
. On request.
Flat
(.681)
(.409)
(.594)
(.
6
2
9
)
(.629)
24
(15/32-32UNS)
EPOXY
(.
1
5
7
)
I
II
III
15.10
17.30
10.40
16.00
11.90-32UNS
4
.0
0
1
6
.0
0
6
.0
0
(.
2
3
6
D
IA
)
(.338)
(.
0
3
9
)
(.
2
3
6
)
(.
2
3
6
)
(.157)
(.062 DIA)
1
.0
0
6
.0
0
6
.0
0
1.60
4.00
8.60
(.059)
1.50
(.059)
1.50
22.00
(.866)
(15/32-32UNS)
11.90-32UNS
(.
2
3
6
D
IA
)
6
.0
0
EPOXY
4
.0
0
(.
1
5
7
)
(.
6
2
9
)
1
6
.0
0
(.681)
(.409)
(.594)
24
I
II
III
15.10
17.30
10.40
4.00
6
.0
0
(.157)
(.
2
3
6
)
6
.0
0
1
.0
0
(.
2
3
6
)
(.
0
3
9
)
8.60
(.338)
1.60
(.062 DIA)
(.059)
1.50
22.00
(.866)
(15/32-32UNS)
11.90-32UNS
(.
2
3
6
D
IA
)
6
.0
0
EPOXY
4
.0
0
(.
1
5
7
)
(.
6
2
9
)
1
6
.0
0
(.681)
(.409)
(.594)
24
I
II
III
15.10
17.30
10.40
4.00
6
.0
0
(.157)
(.
2
3
6
)
6
.0
0
1
.0
0
(.
2
3
6
)
(.
0
3
9
)
8.60
(.338)
1.60
(.062 DIA)
5.10
(.200)
12.00
(.472 DIA)
(.551)
(.090)
11.9-32UNS
(15/32-32UNS)
14.00
2.30
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PDF描述 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSO615C G | 功能描述:MOSFET SIPMOS Sm-Signal TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSO615CG | 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| BSO615CGHUMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N/P-CH 60V 3.1A/2A 8-Pin DSO 制造商:Infineon Technologies AG 功能描述:P-KANAL - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N/P-CH 60V 3.1A/2A 8SOIC |
| BSO615CT | 功能描述:MOSFET N/P-CH 60V 3.1A/2A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:SIPMOS® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| BSO615N | 功能描述:MOSFET DUAL N-CH 60V 2.6A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:SIPMOS® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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