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參數(shù)資料
| 型號： | BSN304A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | INDUCTOR HI CURRENT RADIAL 120UH |
| 中文描述： | 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 88K |
| 代理商： | BSN304A |
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
Fig.6 Typical output characteristics.
Tj = 25
°
C.
handbook, halfpage
0
0.8
VDS (V)
ID
(A)
0.4
0
4
8
12
MRC237
P = 1 W
4 V
3.5 V
3 V
2 V
5 V
2.5 V
VGS = 10 V
Fig.7 Typical transfer characteristics.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
(A)
0
10
0
0.2
0.4
0.6
0.8
2
4
6
8
MRC243
VGS (V)
Fig.8
Drain-source on-resistance as a function of
drain current, typical values.
T
j
= 25
°
C.
handbook, halfpage
10
0
10
2
20
MRC239
10
1
1
ID (A)
RDSon
(
)
3 V 3.5 V
4 V
10 V
2.5 V
5 V
VGS = 2 V
Fig.9
Drain-source on-resistance as a function of
gate-source voltage, typical values.
V
DS
= 100 mV; T
j
= 25
°
C.
handbook, halfpage
(
)
0
10
0
5
10
15
20
2
4
6
8
MRC240
VGS (V)
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