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參數(shù)資料
| 型號(hào)： | BSM150GB120DN2 |
| 元件分類(lèi)： | 開(kāi)關(guān) |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 525K |
| 代理商： | BSM150GB120DN2 |
A-80
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Overview
A
12
SERIES
Terminals and bushings
1
Solder lug terminals,
threaded bushing
11,9 (15/32)
2
Straight PC terminals,
threaded bushing
11,9 (15/32)
Number of poles
4
Double pole
5
Three pole
6
Four pole
Electrical functions
6
ON
-
ON
9
ON
OFF
ON
7
MOM OFF
MOM
8
ON
OFF
MOM
4
ON
ON MOM
MOM ON MOM
5
ON
MOM
Function 4
. For 2 and 4 poles only.
. Must not have blank in
"momentary" box.
Momentary
1R
ON ON MOM
2R
MOM ON MOM
. For function 4 only.
. Leave blank for other
functions.
ABOUT THIS SERIES
On the following pages, you will find successively :
- model structure of switches
- options in the same order as in above chart
Dimensions
: first dimensions are in mm while inches are shown as bracketted numbers.
Fluorescent tip
Blank
None
0.38
White fluorescent
tip to lever
X778
High performance
fully sealed
matt black switches.
Levers
Blank
Standard lever
-12
Short lever
Locking levers
1V
1 locked position
2V
2 locked positions
3V
3 locked positions
Approval
CECC
Availability :
Consult factory for
details of approved
models.
Sealing boots
can be used to further protect the switches against dust and water. They are presented in section H.
Mounting accessories
: standard hardware supplied with all models : 1 hex nut 14 mm (.551) across flats, part number U41.
This nut is presented after model structure of switches.
Security caps
are available to prevent inadvertent lever operation. They are presented in section I.
Packaging unit
: 2 pole models : 25 pieces
3 and 4 pole models : 20 pieces
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSM150GB120DN2_E3166 | 功能描述:IGBT 模塊 N-CH 1.2KV 210A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| BSM150GB120DN2_E3166C-SE | 制造商:Infineon Technologies AG 功能描述: |
| BSM150GB120DN2E3166 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
| BSM150GB120DN2F | 功能描述:IGBT 模塊 IGBT 1200V 150A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| BSM150GB120DN2F_E3256 | 功能描述:IGBT 模塊 IGBT 1200V 150A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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