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參數(shù)資料
| 型號(hào)： | BSH299 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-channel enhancement mode MOS transistor |
| 中文描述： | 200 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | BSH299 |
1998 Feb 18
2
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
BSH299
FEATURES
Low threshold voltage
High-speed switching
No secondary breakdown
Direct interface to C-MOS, TTL, etc.
APPLICATIONS
Power management
Battery powered applications e.g. cellular phones
General purpose switch.
DESCRIPTION
P-channel enhancement mode MOS transistor in a
SOT363 SMD package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT363
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
d
d
g
s
d
d
drain
drain
gate
source
drain
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
s
Top view
d
g
MAM396
1
3
2
4
5
6
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
±
20
2
0.2
10
0.7
UNIT
V
DS
V
GSO
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
0.8
V
V
V
A
W
open drain
I
D
=
1 mA; V
DS
= V
GS
T
s
= 80
°
C
I
D
=
0.13 A; V
GS
=
10 V
T
s
= 80
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BSH301 | Dual N-channel enhancement mode MOS transistor |
| BSM111AR(C) | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 100V V(BR)DSS | 200A I(D) |
| BSM121 | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D) |
| BSM121AR(C) | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D) |
| BSM181(C) | TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 36A I(D) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BSH-30-01-F-D-A | 制造商:Samtec Inc 功能描述:CONN SCKT STRP SKT 60 POS 0.5MM SLDR ST SMD - Bulk |
| BSH301 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel enhancement mode MOS transistor |
| BSHORTNOSE | 制造商:Jonard Industries 功能描述:SHORT NOSE B TYPE PLIER |
| BSI-0.8S3R0N | 制造商:Bellnix Co Ltd 功能描述:Bulk |
| BSI-0.8S6R0N | 制造商:Bellnix Co Ltd 功能描述:Bulk |
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