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參數(shù)資料
| 型號(hào)： | BSH120T |
| 英文描述： | Automotive Rectifier Diodes |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 2.2AI（四）|到92 |
| 文件頁數(shù)： | 2/13頁 |
| 文件大?。?/td> | 357K |
| 代理商： | BSH120T |
Philips Semiconductors
BSH120T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 06 September 2000
2 of 13
9397 750 07451
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
T
j
= 25 to 150
°
C
T
amb
= 25
°
C; V
GS
= 10 V
T
amb
= 25
°
C
Typ
80
120
Max
30
2.2
0.83
150
100
200
Unit
V
A
W
°
C
m
m
V
GS
= 10 V; I
D
= 2.2 A
V
GS
= 4.5 V; I
D
= 1 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
T
j
= 25 to 150
°
C
T
j
= 25 to 150
°
C; R
GS
= 20 k
Min
65
65
Max
30
30
±
20
2.2
1.4
9
0.83
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
amb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
amb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
amb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
amb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
amb
= 25
°
C; t
p
≤
10
μ
s
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
amb
= 25
°
C
0.7
9
A
A
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