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參數(shù)資料
| 型號： | BS223 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (P-Channel)(P通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（P溝道）性（P通道的DMOS晶體管） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | BS223 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BS223
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at –I
D
= 100
μ
A, V
GS
= 0 V
–V
(BR)DSS
60
70
–
V
Gate-Body Leakage Current, Forward
at –V
GSF
= 20 V, V
DS
= 0 V
–I
GSSF
–
–
500
nA
Gate-Body Leakage Current, Reverse
at –V
GSR
= 20 V, V
DS
= 0 V
–I
GSSR
–
–
500
nA
Drain Cutoff Current
at –V
DS
= 60 V, V
GS
= 0 V
–I
DSS
–
–
250
μ
A
Gate-Source Threshold Voltage
at V
GS
= V
DS
, –I
D
= 250
μ
A
–V
GS(th)
1
1.5
3
V
Drain-Source ON Resistance
at –V
GS
= 10 V, –I
D
= 600 mA
R
DS(on)
–
0.7
0.8
Capacitance
at –V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
Input Capacitance
Output Capacitance
Feedback Capacitance
C
iSS
C
OSS
C
rSS
–
–
–
350
150
35
–
–
–
pF
pF
pF
Switching Times
at –V
GS
= 10 V, –V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
–
–
40
100
–
–
ns
ns
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
150
1)
K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
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