參數(shù)資料
型號: BS107A
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: INDUCTOR,TOROID,HORIZONTAL, 22.0 uH,7.0 IDC,0.015 OHM,
中文描述: 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SC-43, 3 PIN
文件頁數(shù): 3/8頁
文件大小: 49K
代理商: BS107A
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BS107A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1.
Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for collector lead
min. 10 mm
×
10 mm.
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T
case
= 25
°
C
Storage temperature
Junction temperature
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
55 to +150
°
C
max.
200 V
20 V
250 mA
500 mA
0.6 W
150
°
C
From junction to ambient (note 1)
R
th j-a
=
125 K/W
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