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參數(shù)資料
| 型號： | BPW16N |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTOTRANSISTOR NPN 1.8MM CLEAR |
| 中文描述： | Photodetector Transistors NPN Phototransistor 32V 100mW 825nm |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 87K |
| 代理商： | BPW16N |
BPW16N
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
1
Document Number: 81515
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Silicon NPN Phototransistor
DESCRIPTION
BPW16N is a silicon NPN phototransistor with high radiant
sensitivity in clear, T- plastic package with flat window. It
is sensitive to visible and near infrared radiation. On PCB
this package size enables assembly of arrays with 2.54 mm
pitch.
FEATURES
Package type: leaded
Package form: T-
Dimensions (in mm): 1.8
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Fast response times
Angle of half sensitivity:
= ± 40°
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8638
PRODUCT SUMMARY
COMPONENT
BPW16N
I
ca
(mA)
0.14
(deg)
± 40
λ
0.1
(nm)
450 to 1040
ORDERING INFORMATION
ORDERING CODE
BPW16N
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Connected with Cu wire, 0.14 mm
2
TEST CONDITION
SYMBOL
V
CEO
V
ECO
I
C
I
CM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
32
5
50
100
100
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
V
mA
mA
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
55 °C
t
≤
3 s
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BPW16N | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW16N_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPW17N | 功能描述:光電晶體管 NPN Phototransistor 32V 100mW 825nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW17N | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T3/4 |
| BPW17N_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
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