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參數(shù)資料
| 型號： | BLY89 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 68K |
| 代理商： | BLY89 |
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
max
max
max
max
max
max
36 V
18 V
4 V
6 A
12 A
73 W
Fig.2 D.C. soar.
handbook, halfpage
1
10
10
2
MGP864
1
Th = 70
°
C
Tmb = 25
°
C
VCE (V)
IC
(A)
I
II Continuous r.f. operation
III Short-time operation during mismatch
Continuous d.c. operation
Fig.3
R.F. power dissipation; V
CE
≤
16,5 V; f
>
1 MHz.
handbook, halfpage
0
100
20
40
60
MGP865
50
Prf
(W)
Th (
°
C)
ΙΙΙ
ΙΙ
Ι
derate by
0.38 W/K
derate by
0.29 W/K
THERMAL RESISTANCE
(dissipation 20 W; T
mb
= 79
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
3,1 K/W
2,3 K/W
0,45 K/W
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| BM11W | BOX MULTIPURPOSE WHITE |
| BM12W | BOX MULTIPURPOSE WHITE |
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| BM1 | TRIGGERMODUL EINPHASIG |
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相關(guān)代理商/技術(shù)參數(shù) |
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| BLY89C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY90 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY91A | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON POWER TRANSISTOR |
| BLY91C | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLY92 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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