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參數(shù)資料
| 型號： | BLY87 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | SPDT SUBMINIATURE POWER RELAY |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大小： | 79K |
| 代理商： | BLY87 |
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLY87C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
36 V
18 V
4 V
1,5 A
4,0 A
20 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
0.5
5
10
20
1
1.5
MGP820
15
IC
(A)
VCE (V)
Tmb = 25
°
C
Th = 70
°
C
Fig.3
R.F. power dissipation; V
CE
≤
16,5 V;
f
>
1 MHz.
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
handbook, halfpage
0
100
10
0
20
MGP821
50
Prf
(W)
Th (
°
C)
ΙΙΙ
Ι
ΙΙ
derate by 0.12 W/K
0.1 W/K
THERMAL RESISTANCE
(dissipation = 8 W; T
mb
= 73,5
°
C, i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
10,7 K/W
8,6 K/W
0,45 K/W
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