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參數(shù)資料
| 型號(hào)： | BLW87 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | BLW87 |
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
BLW87
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
65 to
+
150
°
C
max.
36 V
18 V
4 V
6 A
12 A
76 W
200
°
C
Fig.2 D.C. SOAR.
handbook, halfpage
1
MGP649
1
10
10
2
VCE (V)
IC
(A)
Th = 70
°
C
Tmb = 25
°
C
Fig.3
R.F. power dissipation; V
CE
≤
16,5 V; f
≥
1 MHz.
handbook, halfpage
0
50
100
150
0
50
MGP650
Prf
(W)
Th (
°
C)
continuous
d.c. operation
derate by
0.32 W/K
continuous
r.f. operation
derate by
0.42 W/K
short-time
operation
during mismatch
THERMAL RESISTANCE
(dissipation = 20 W; T
mb
= 76
°
C; i.e. T
h
= 70
°
C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j-mb(dc)
R
th j-mb(rf)
R
th mb-h
=
=
=
3,0 K/W
2,25 K/W
0,3 K/W
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