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參數(shù)資料
| 型號(hào)： | BLV861 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-289A, 5 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | BLV861 |
1998 Jan 16
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV861
Fig.9
Input impedance (per section) as a function
of frequency (series components);
typical values.
T
h
= 25
°
C; V
CE
= 28 V; I
CQ
= 0.1 A; P
L
= 100 W (total device).
handbook, halfpage
(
)
0
400
4
2
MGK772
1
3
ri
xi
600
800
500
700
900
f (MHz)
Fig.10 Load impedance (per section) as a function
of frequency (series components);
typical values.
T
h
= 25
°
C; V
CE
= 28 V; I
CQ
= 0.1 A; P
L
= 100 W (total device).
handbook, halfpage
(
)
400
600
800
500
700
900
4
MGK773
f (MHz)
2
6
4
2
6
0
RL
XL
Fig.11 Power gain and collector efficiency as
functions of frequency; typical values.
T
h
= 25
°
C; V
CE
= 28 V; I
CQ
= 0.1 A; P
L
= 100 W (total device).
handbook, halfpage
(dB)
400
600
800
900
MGK774
4
2
0
10
6
f (MHz)
η
C
(%)
50
60
0
20
40
500
700
10
30
8
Gp
η
C
Fig.12 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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