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參數(shù)資料
| 型號： | BLV2045N |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | BLV2045N |
2000 Feb 21
3
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Capacitance of die only.
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter test circuit.
Ruggedness in class-AB operation
The BLV2045N is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the
following conditions: f
1
= 1990.0 MHz; f
2
= 1990.1 MHz; V
CE
= 26 V; I
CQ
= 150 mA; P
L
= 35 W (PEP); T
mb
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
P
L
= 35 W;
η
C
= 40%; T
mb
= 25
°
C
1.4
K/W
R
th mb-h
0.4
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
4
100
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage open base; I
C
= 60 mA
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
open emitter; I
C
= 20 mA
65
27
3
45
t.b.f.
V
V
V
mA
open collector; I
E
= 40 mA
V
CE
= 26 V; V
BE
= 0
V
CE
= 10 V; I
C
= 2 A
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 1
V
CE
= 26 V; I
C
= 0;
f = 1 MHz
pF
C
re
feedback capacitance
t.b.f.
pF
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
η
C
(%)
d
im
(dBc)
≤
30
typ.
32
CW, class-AB
2-tone, class-AB
1990
26
26
150
150
35
typ. 9.5
≥
9.5
typ. 10.2
typ. 43
≥
33
typ. 35
f
1
= 1990.0; f
2
= 1990.1
35 (PEP)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLV2046 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV2047 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV21 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLV2347 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 10A I(C) | SOT-486A |
| BLV25 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
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