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參數資料
| 型號： | BLV12 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數： | 8/11頁 |
| 文件大小： | 72K |
| 代理商： | BLV12 |
September 1991
8
Philips Semiconductors
Product specification
VHF power transistor
BLV12
Fig.9 Component layout for 175 MHz class-B test circuit.
The circuit and components are situated on one side of an epoxy fibre-glass board; the other side is unetched
and serves as a ground plane. Earth connections are made by means of hollow rivets and copper straps under
the emitters, to provide a direct contact between the component side and the ground plane.
handbook, full pagewidth
MGP245
150
72
C1
L1
L3
L2
L4
L5
L6
L7
R1
C3a
C4
C5
R2
+
VCC
C7
L8
C8
C3b
rivet
C6b
C6a
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