參數(shù)資料
型號: BLV103
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-171A, 6 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 89K
代理商: BLV103
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV103
CHARACTERISTICS
T
j
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter;
I
C
= 4 mA
open base;
I
C
= 30 mA
open collector;
I
E
= 2 mA
V
BE
= 0;
V
CE
= 30 V
V
CE
= 25 V;
I
C
= 300 mA
V
CB
= 25 V;
I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 25 V;
I
C
= 20 mA;
f = 1 MHz
50
V
V
(BR)CEO
collector-emitter breakdown voltage
30
V
V
(BR)EBO
emitter-base breakdown voltage
4
V
I
CES
collector-emitter leakage current
1
mA
h
FE
DC current gain
20
40
C
c
collector capacitance
6.6
8
pF
C
re
feedback capacitance
3.5
4.5
pF
Fig.4
DC current gain as a function of collector
current, typical values.
handbook, halfpage
hFE
MRA361
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
VCE = 25 V
5 V
IC (A)
Fig.5
Collector capacitance as a function of
collector-base voltage, typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
0
10
0
10
Cc
(pF)
20
VCB (V)
30
MRA358
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