參數(shù)資料
型號: BLT92
廠商: NXP Semiconductors N.V.
英文描述: UHF power transistor
中文描述: 超高頻大功率晶體管
文件頁數(shù): 5/10頁
文件大小: 56K
代理商: BLT92
May 1989
5
Philips Semiconductors
Product specification
UHF power transistor
BLT92/SL
APPLICATION INFORMATION
RF performance in CW operation (common-emitter circuit; class-B); f = 900 MHz; T
mb
= 25
°
C
List of components:
Note
1.
American Technical Ceramics capacitor type 100 A or capacitor of same quality.
MODE OF OPERATION
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Class-B; CW
7.5
3.0
>
typ.
7.0
8.5
>
typ.
50
57
C1
C3
C4
C11
C14
L1
L2
L3
L5
L6
L7
= C2 = C8 = C10 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001)
= C6 = C7 = 3.3 pF multilayer ceramic chip capacitor
(1)
= C5 = C9 = 5.6 pF multilayer ceramic chip capacitor
(1)
= C12 = C13 = 180 pF multilayer ceramic chip capacitor
= 1
μ
F (35 V) tantalum capacitor
= 50
stripline (25 mm
×
2.4 mm)
= 50
stripline (11 mm
×
2.4 mm)
= L4 = 25
stripline (11.5 mm
×
6.0 mm)
= 50
stripline (7.0 mm
×
2.4 mm)
= 50
stripline (27.0 mm
×
2.4 mm)
= 4 turns closely wound enamelled Cu wire (0.4 mm), int. dia;. 3 mm, with ferrite beat
(cat. no. 4330 830 32221) over the coldside lead
= 1 turn Cu wire (1.0 mm); int. dia. 5.5 mm; length 2 mm; leads 2
×
5 mm
= L10 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642)
= R2 = 10
±
5%; 0.25 W metal film resistor
The striplines on a double Cu-clad printed circuit board with PTFE fibreglass dielectric (
ε
r
= 2.2);
thickness 1/32 inch; thickness of copper-sheet 2
×
35
μ
m.
L8
L9
R1
Fig.4 Class-B test circuit at f = 900 MHz.
handbook, full pagewidth
MDA299
D.U.T.
C6
C5
L5
C9
C1
C4
L2
C2
C3
L7
L1
R1
L9
L4
L3
L6
C11
C10
C7
C8
50
50
L8
C12
+VCC
C13
C14
L10
R2
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