參數(shù)資料
型號: BLT53
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-122D, 4 PIN
文件頁數(shù): 4/11頁
文件大?。?/td> 72K
代理商: BLT53
May 1991
4
Philips Semiconductors
Product specification
UHF power transistor
BLT53
CHARACTERISTICS
T
j
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter;
I
C
= 20 mA
open base;
I
C
= 40 mA
open collector;
I
E
= 4 mA
V
BE
= 0;
V
CE
= 10 V
V
CE
= 5 V;
I
C
= 1.2 A
V
CE
= 7.5 V;
I
E
= 1.6 A
V
CB
= 7.5 V;
I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 7.5 V;
I
C
= 0;
f = 1 MHz
f = 1 MHz
20
V
V
(BR)CEO
collector-emitter breakdown voltage
10
V
V
(BR)EBO
emitter-base breakdown voltage
3
V
I
CES
collector-emitter leakage current
1
mA
h
FE
DC current gain
25
f
T
transition frequency
3.9
GHz
C
c
collector capacitance
24
pF
C
re
feedback capacitance
17
pF
C
c-mb
collector-mounting base capacitance
1.2
pF
Fig.4
DC current gain as a function of collector
current, typical values.
V
CE
= 5 V.
handbook, halfpage
0
0
2
4
hFE
IC (A)
6
60
20
40
MCD194
Fig.5
Collector capacitance as a function of
collector-base voltage, typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
(pF)
0
4
8
VCB (V)
12
0
10
MCD195
40
30
20
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