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參數(shù)資料
| 型號： | BLF348 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A1, 4 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 83K |
| 代理商： | BLF348 |
October 1992
3
Philips Semiconductors
Product specification
VHF linear push-pull power MOS transistor
BLF348
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
±
V
GSS
I
D
P
tot
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
65
20
25
500
V
V
A
W
up to T
mb
= 25
°
C; total device;
both sections equally loaded
T
stg
T
j
storage temperature
junction temperature
65
150
200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
total device;
both sections equally loaded
total device;
both sections equally loaded
0.35 K/W
R
th mb-h
0.15 K/W
Fig.2 DC SOAR.
(1) Current is this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°
C.
Total device; both sections equally loaded.
handbook, halfpage
1
10
1
10
VDS (V)
ID
(A)
10
2
(1)
MRA933
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
(W)
0
40
80
160
0
400
MGE616
120
300
200
100
Th (
°
C)
(2)
(1)
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