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參數(shù)資料
| 型號： | BLF277 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, FM-6 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 101K |
| 代理商： | BLF277 |
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF277
Fig.11 Test circuit for class-B operation.
f = 175 MHz.
handbook, full pagewidth
L1
C1
L2
L3
L5
L6
C2
C4
C8
C7
C8
R2
R3
C3
C5
L7
L4
D.U.T.
L10
L12
L14
L15
L17
L18
L19
L13
L18
C19
C14
C18
output
50
input
50
L11
C9
R4
C10
L20
C11
C12
C13
+ VDD
L8
L9
C15
C18
C17
MLA222
R1
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| BLF861 | UHF power LDMOS transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| BLF278 | 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF278,112 | 功能描述:射頻MOSFET電源晶體管 RF DMOS 250W VHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF278/01,112 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR VHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF278112 | 制造商:NXP Semiconductors 功能描述:N CH VHF PUSH / PULL POWER VDMOS 50V 1 |
| BLF278C,112 | 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 125V 18A 5-Pin CDFM Bulk 制造商:NXP Semiconductors 功能描述:BULK TNS-RFPR - Rail/Tube |
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