參數(shù)資料
型號(hào): BLF1822-10
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁數(shù): 3/16頁
文件大小: 156K
代理商: BLF1822-10
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1822-10
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under RF operating conditions.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
65
65
±
15
2.2
+150
200
V
V
A
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
T
mb
= 25
°
C; note 1
VALUE
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
5
K/W
K/W
0.5
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
0.5
1.2
13
11
0.5
MAX.
5
1.5
40
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
DSX
I
GSS
g
fs
R
DSon
C
is
C
os
C
rs
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
V
GS
= 0; I
D
= 0.2 mA
V
DS
= 10 V; I
D
= 20 mA
V
GS
= 0; V
DS
= 26 V
V
GS
= V
GSth
+ 9 V; V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0
V
DS
= 10 V; I
D
= 0.75 A
V
GS
= 10 V; I
D
= 0.75 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
65
4
2.8
V
V
μ
A
A
nA
S
pF
pF
pF
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