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參數(shù)資料
| 型號： | BLF1049 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Base station LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-3 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 110K |
| 代理商： | BLF1049 |
2003 May 14
2
Philips Semiconductors
Product specification
Base station LDMOS transistor
BLF1049
FEATURES
Typical performance at a supply voltage of 27 V:
– 1-tone CW; I
DQ
= 1000 mA
– Output power = 125 W
– Gain = 16.5 dB
– Efficiency = 54%
– EDGE output power = 45 W (AV)
– ACPR400 =
64 dBc at 400 kHz
(EDGE; I
DQ
= 750 mA)
– EVM = 2% rms (AV)
(EDGE; I
DQ
= 750 mA)
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (800 to 1000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifier for GSM, EDGE and CDMA base
stations and multicarrier applications in the
800 to 1000 MHz frequency range.
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 800 MHz to 1000 MHz.
PINNING - SOT502A
PIN
DESCRIPTION
1
2
3
drain
gate
source; connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A .
QUICK REFERENCE DATA
Typical RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
P
L
(W)
G
p
(dB)
η
D
(%)
d
3
(dBc)
ACPR 400
(dBc)
EVM
% rms
(AV)
2
2-tone
1-tone CW
GSM EDGE
920
125 (PEP)
125
45 (AV)
15.5
16.5
15
37
54
32
32
64
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
T
stg
T
j
drain-source voltage
gate-source voltage
storage temperature
junction temperature
65
75
±
15
150
200
V
V
°
C
°
C
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