參數(shù)資料
型號: BLF1047
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 2/8頁
文件大?。?/td> 44K
代理商: BLF1047
2000 Feb 02
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1047
FEATURES
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
APPLICATIONS
Communication transmitter applications in the UHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
PINNING - SOT541A
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
handbook, halfpage
1
Top view
MBK765
3
2
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
26
CW, class-AB (2-tone)
CW, class-AB (1-tone)
f
1
= 960; f
2
= 960.1
960
26
26
70 (PEP)
70
>14
>14
>35
>45
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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