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參數(shù)資料
| 型號(hào)： | BLC6G10LS-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, SOT-896-1, 2 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BLC6G10LS-200 |
BLC6G10-200_6G10LS-200_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 19 April 2006
6 of 9
Philips Semiconductors
BLC6G10-200; BLC6G10LS-200
UHF power LDMOS transistor
9.
Abbreviations
Table 8:
Acronym
3GPP
CCDF
CDMA
CW
DPCH
EDGE
GSM
LDMOS
PAR
PDPCH
RF
VSWR
W-CDMA
Abbreviations
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Code Division Multiple Access
Continuous Wave
Dedicated Physical CHannel
Enhanced Data rates for GSM Evolution
Global System for Mobile communications
Laterally Diffused Metal Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
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