參數(shù)資料
型號: BGY925
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier module(UHF放大器模塊)
中文描述: 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT365A, 4 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 88K
代理商: BGY925
2000 Feb 02
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY925
handbook, halfpage
(%)
50
0
Tamb (
°
C)
100
0
50
10
20
30
40
MCD838
Fig.10 Efficiency as a function of ambient
temperature; typical values.
Z
S
= Z
L
= 50
; P
L
= 16 W; V
S1
= V
S2
= 26 V.
handbook, halfpage
(A)
0.4
50
0
Tamb (
°
C)
100
0
50
0.1
0.2
0.3
MCD839
Fig.11 Quiescent current as a function of ambient
temperature; typical values.
Z
S
= Z
L
= 50
; V
S1
= V
S2
= 26 V; P
D
= 0.
handbook, halfpage
PL(
1db)
(W)
0
50
0
Tamb (
°
C)
100
30
10
20
50
MCD840
Fig.12 Load power at
1 dB gain as a function of
ambient temperature; typical values.
Z
S
= Z
L
= 50
; P
ref
= 5 W; V
S1
= V
S2
= 26 V.
handbook, halfpage
(dB)
50
0
Tamb (
°
C)
100
24
50
26
28
30
32
MCD841
Fig.13 Power gain as a function of ambient
temperature; typical values.
Z
S
= Z
L
= 50
; P
L
= 5 W; V
S1
= V
S2
= 26 V.
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