參數(shù)資料
型號(hào): BGY916
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier module
中文描述: 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: PLASTIC, SOT-365A, 4 PIN
文件頁數(shù): 7/12頁
文件大小: 88K
代理商: BGY916
1998 May 27
7
Philips Semiconductors
Product specification
UHF amplifier module
BGY916
List of components
(see Figs 6 and 7)
Note
1.
The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (
ε
r
= 4.5); thickness = 1 mm.
COMPONENT
DESCRIPTION
VALUE
CATALOGUE NO.
C1, C2
C3, C4
L1, L2
R1, R2
Z
1
, Z
2
electrolytic capacitor
multilayer ceramic chip capacitor
Grade 4S2 Ferroxcube bead
metal film resistor
stripline; note 1
10
μ
F; 35 V
100 nF; 50 V
4330 030 36300
2322 195 13109
10
; 0.4 W
50
MOUNTING RECOMMENDATIONS
To ensure a good thermal contact and to prevent
mechanical stresses when bolted down, the flatness of the
mounting base is designed to be typically better than
0.1 mm. The mounting area of the heatsink should be flat
and free from burrs and loose particles. The heatsink
should be rigid and not prone to bowing under thermal
cycling conditions. The thickness of a solid heatsink
should be not less than 5 mm to ensure a rigid assembly.
A thin, even layer of thermal compound should be used
between the mounting base and the heatsink to achieve
the best possible contact thermal resistance. Excessive
use of thermal compound will result in an increase in
thermal resistance and possible bowing of the mounting
base; too little will also result in poor thermal conduction.
The module should be mounted to the heatsink using
3 mm bolts with flat washers. The bolts should first be
tightened to “finger tight” and then further tightened in
alternating steps to a maximum torque of 0.4 to 0.6 Nm.
Once mounted on the heatsink, the module leads can be
soldered to the printed-circuit board. A soldering iron may
be used up to a temperature of 250
°
C for a maximum of
10 seconds at a distance of 2 mm from the plastic cap.
ESD precautions must be taken to protect the device from
electrostatic damage.
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