- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373018 > BFQ68 (NXP SEMICONDUCTORS) NPN 4 GHz wideband transistor PDF資料下載
參數(shù)資料
| 型號： | BFQ68 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BFQ68 |
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
DESCRIPTION
NPN transistor mounted in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very
high output voltage capabilities.
It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power
band IV and V equipment.
PINNING
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT122A.
fpage
Top view
MBK187
3
1
2
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
4
MAX.
UNIT
V
CEO
I
C
P
tot
f
T
collector-emitter voltage
collector current
total power dissipation
transition frequency
open base
18
300
4.5
V
mA
W
GHz
up to T
c
= 110
°
C
I
C
= 240 mA; V
CE
= 15 V; f = 500 MHz;
T
j
= 25
°
C
I
c
= 240 mA; V
CE
= 15 V;
d
im
=
60 dB; R
L
= 75
;
f
(p
+
q
r)
= 793.25 MHz; T
amb
= 25
°
C
I
c
= 240 mA; V
CE
= 15 V; R
L
= 75
;
f = 800 MHz; T
amb
= 25
°
C
I
c
= 240 mA; V
CE
= 15 V; R
L
= 75
;
f = 800 MHz; T
amb
= 25
°
C
V
o
output voltage
1.6
V
P
L1
output power at 1 dB gain
compression
third order intercept point
28
dBm
ITO
47
dBm
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFQ741 | NPN 7GHz wideband transistor |
| BFR101A | TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 1.5MA I(DSS) | SOT-143 |
| BFR15A | TRANSISTOR | BJT | NPN | 30MA I(C) | TO-72 |
| BFR17 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 |
| BFR53 | NPN 2 GHz wideband transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ68,112 | 功能描述:射頻雙極小信號晶體管 BULK TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ68/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFQ69 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
| BFQ70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
| BFQ71 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。