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參數(shù)資料
| 型號(hào)： | BFQ246 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP video transistor(PNP視頻晶體管) |
| 中文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | BFQ246 |
1996 Sep 04
2
Philips Semiconductors
Product specification
PNP video transistor
BFQ246
APPLICATIONS
Primarily intended for cascode
output and buffer stages in high
resolution colour monitors.
DESCRIPTION
PNP silicon transistor encapsulated
in a 4-lead plastic SOT223 package.
PINNING
PIN
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
handbook, halfpage
4
1
2
3
MSB002 - 1
Top view
Fig.1 Simplified outline SOT223.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
100
100
3
175
UNIT
V
CBO
I
C
P
tot
f
T
C
re
T
j
collector-base voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
open emitter
1
1.7
V
mA
W
GHz
pF
°
C
up to T
s
= 60
°
C
I
C
=
25 mA; V
CE
=
10 V
I
C
= 0; V
CB
=
10 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
100
95
3
100
100
3
+175
175
UNIT
V
CBO
V
CER
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
open emitter
R
BE
= 100
open collector
see Fig.2
see Fig.2
up to T
s
= 60
°
C; note 1; see Fig.3
65
V
V
V
mA
mA
W
°
C
°
C
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| BFQ293 | TRANSISTOR | BJT | NPN | 190V V(BR)CEO | 250MA I(C) | SOT-32 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ251 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP video transistor |
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| BFQ252 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP video transistors |
| BFQ252A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP video transistors |
| BFQ255 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP video transistors |
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