參數(shù)資料
型號(hào): BCY79
廠商: 意法半導(dǎo)體
英文描述: Low Noise Audio Amplifiers(硅平面外延工藝PNP晶體管(用于音頻放大器))
中文描述: 低噪聲音頻放大器(硅平面外延工藝進(jìn)步黨晶體管(用于音頻放大器))
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 82K
代理商: BCY79
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
150
450
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= -35 V
V
CE
= -45 V
V
CE
= -35 V
T
amb
= 150
o
C
T
amb
= 100
o
C
-2
-20
-100
-10
nA
nA
μ
A
μ
A
I
CEX
Collector Cut-off
Current (V
BE
= -2V)
Emitter Cut-off Current
(I
C
= 0)
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Collector-Base
Saturation Voltage
V
CE
= -45 V
-20
I
EBO
V
EB
= -4 V
-20
nA
I
C
= -10
μ
A
-45
V
I
C
= -2 mA
-45
V
I
E
= -1
μ
A
-5
V
I
C
= -10 mA
I
C
= -100 mA
I
B
= -0.25 mA
I
B
= -2.5 mA
-0.12
-0.4
-0.25
-0.8
V
V
I
C
= -10 mA
I
C
= -100 mA
I
B
= -0.25 mA
I
B
= -2.5 mA
-0.6
-0.7
-0.7
-0.85
-0.85
-1.2
V
V
V
BE(on)
Base-Emitter On
Voltage
I
C
= -10
μ
A
I
C
= -2 mA
I
C
= -10 mA
I
C
= -100 mA
I
C
= -10
μ
A
Gr. VII
Gr. VIII
Gr. IX
I
C
= -2 mA
Gr. VII
Gr. VIII
Gr. IX
I
C
= -10 mA
Gr. VII
Gr. VIII
Gr. IX
I
C
= -100 mA
Gr. VII
Gr. VIII
Gr. IX
V
CE
= -5 V
V
CE
= -5 V
V
CE
= -1 V
V
CE
= -1 V
-0.6
-0.55
-0.65
-0.68
-0.75
-0.75
V
V
V
V
h
FE
DC Current Gain
V
CE
= -5 V
V
CE
= -5 V
V
CE
= -1 V
V
CE
= -1 V
30
40
120
180
250
80
120
160
40
45
60
140
200
270
170
250
350
180
260
360
220
310
460
400
630
h
fe
Small Signal Current
Gain
I
C
= -2 mA
Gr. VII
Gr. VIII
Gr. IX
V
CE
= -5 V
f = 1KHz
125
175
250
200
260
330
250
350
500
Pulsed: Pulse duration = 300
μ
s, duty cycle
2 %
BCY79
2/6
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