參數(shù)資料
型號(hào)： BCW60C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： NPN EPITAXIAL SILICON TRANSISTOR
中文描述： npn型外延硅晶體管
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 40K
代理商： BCW60C
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88171
09-May-02
Electrical Characteristics
Ratings at 25
°
C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
–
30
40
100
–
–
–
–
–
–
–
–
–
–
–
–
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
120
180
250
380
–
–
–
–
220
310
460
630
–
–
–
–
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
60
80
100
110
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
at
–
I
C
= 10 mA,
–
I
B
= 0.25 mA
at
–
I
C
= 50 mA,
–
I
B
= 1.25 mA
–
V
CEsat
–
V
CEsat
60
120
–
–
250
550
mV
mV
Base-Emitter Saturation Voltage
at
–
I
C
= 10 mA,
–
I
B
= 0.25 mA
at
–
I
C
= 50 mA,
–
I
B
= 1.25 mA
–
V
BEsat
–
V
BEsat
600
680
–
–
850
1050
mV
mV
Base-Emitter Voltage
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
–
V
BE
–
V
BE
–
V
BE
600
–
–
650
550
720
750
–
–
mV
mV
mV
Collector-Emiter Cut-off Current
at
–
V
CE
= 32 V, V
EB
=0
at
–
V
CE
= 32 V, V
EB
=0, T
A
= 150
°
C
Emitter-Base Cut-off Current
at
–
V
EB
= 4 V, I
C
=0
–
I
CES
–
–
–
–
20
20
nA
μ
A
–
I
EBO
–
–
20
nA
Gain-Bandwidth Product
at
–
V
CE
= 5 V,
–
I
C
= 10 mA, f = 100 MHz
f
T
100
–
–
MHz
Collector-Base Capacitance
at
–
V
CB
= 10 V, f = 1 MH
Z,
I
E
=0
C
CBO
–
4.5
–
pF
Emitter-Base Capacitance
at
–
V
EB
= 0.5 V, f = 1 MH
Z,
I
C
=0
C
EBO
–
11
–
pF
Noise Figure
at
–
V
CE
= 5 V,
–
I
C
= 200
μ
A, R
S
= 2 k
, f = 100 kH
Z
, B = 200Hz
Small Signal Current Gain
at
–
V
CE
= 5V,
–
I
C
= 2 mA, f = 1.0 kH
Z
F
–
2
6
dB
BCW60A
BCW60B
BCW60C
BCW60D
–
–
–
–
200
260
330
520
h
fe
Turn-on Time at R
L
= 990
(see fig. 1)
–
V
CC
= 10V,
–
Ic = 10mA,
–
I
B(on)
= I
B(off)
= 1mA
Turn-off Time at R
L
= 990
(see fig. 1)
–
V
CC
= 10V,
–
Ic = 10mA,
–
I
B(on)
= I
B(off)
= 1mA
t
on
–
85
150
ns
t
off
–
480
800
ns
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BCW60C,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BCW60C,235 功能描述:兩極晶體管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BCW60C/E8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23
BCW60C/E9 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 100MA I(C) | SOT-23
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