參數(shù)資料
型號： BCW60A
廠商： Vishay Intertechnology,Inc.
英文描述： Small Signal Transistors (PNP)
中文描述： 小信號晶體管（進步黨）
文件頁數(shù)： 2/3頁
文件大?。?/td> 40K
代理商： BCW60A
BCW61 Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
2
Document Number 88171
09-May-02
Electrical Characteristics
Ratings at 25
°
C ambient temperature unless otherwise specified.
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
–
30
40
100
–
–
–
–
–
–
–
–
–
–
–
–
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
120
180
250
380
–
–
–
–
220
310
460
630
–
–
–
–
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
60
80
100
110
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
at
–
I
C
= 10 mA,
–
I
B
= 0.25 mA
at
–
I
C
= 50 mA,
–
I
B
= 1.25 mA
–
V
CEsat
–
V
CEsat
60
120
–
–
250
550
mV
mV
Base-Emitter Saturation Voltage
at
–
I
C
= 10 mA,
–
I
B
= 0.25 mA
at
–
I
C
= 50 mA,
–
I
B
= 1.25 mA
–
V
BEsat
–
V
BEsat
600
680
–
–
850
1050
mV
mV
Base-Emitter Voltage
at
–
V
CE
= 5 V,
–
I
C
= 2 mA
at
–
V
CE
= 5 V,
–
I
C
= 10
μ
A
at
–
V
CE
= 1 V,
–
I
C
= 50 mA
–
V
BE
–
V
BE
–
V
BE
600
–
–
650
550
720
750
–
–
mV
mV
mV
Collector-Emiter Cut-off Current
at
–
V
CE
= 32 V, V
EB
=0
at
–
V
CE
= 32 V, V
EB
=0, T
A
= 150
°
C
Emitter-Base Cut-off Current
at
–
V
EB
= 4 V, I
C
=0
–
I
CES
–
–
–
–
20
20
nA
μ
A
–
I
EBO
–
–
20
nA
Gain-Bandwidth Product
at
–
V
CE
= 5 V,
–
I
C
= 10 mA, f = 100 MHz
f
T
100
–
–
MHz
Collector-Base Capacitance
at
–
V
CB
= 10 V, f = 1 MH
Z,
I
E
=0
C
CBO
–
4.5
–
pF
Emitter-Base Capacitance
at
–
V
EB
= 0.5 V, f = 1 MH
Z,
I
C
=0
C
EBO
–
11
–
pF
Noise Figure
at
–
V
CE
= 5 V,
–
I
C
= 200
μ
A, R
S
= 2 k
, f = 100 kH
Z
, B = 200Hz
Small Signal Current Gain
at
–
V
CE
= 5V,
–
I
C
= 2 mA, f = 1.0 kH
Z
F
–
2
6
dB
BCW60A
BCW60B
BCW60C
BCW60D
–
–
–
–
200
260
330
520
h
fe
Turn-on Time at R
L
= 990
(see fig. 1)
–
V
CC
= 10V,
–
Ic = 10mA,
–
I
B(on)
= I
B(off)
= 1mA
Turn-off Time at R
L
= 990
(see fig. 1)
–
V
CC
= 10V,
–
Ic = 10mA,
–
I
B(on)
= I
B(off)
= 1mA
t
on
–
85
150
ns
t
off
–
480
800
ns
相關(guān)PDF資料
PDF描述
BCW60B Small Signal Transistors (PNP)
BCW60D Small Signal Transistors (PNP)
BCW61B PNP general purpose transistors
BCW61C PNP general purpose transistors
BCW61D PNP general purpose transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BCW60A 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor
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BCW60A_D87Z 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BCW60A_Q 功能描述:兩極晶體管 - BJT NPN/ 32V/ 100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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