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參數(shù)資料
| 型號(hào)： | BCP69L-XX-AA3-F-R |
| 廠(chǎng)商： | 友順科技股份有限公司 |
| 英文描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 中文描述： | npn型通用放大器 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | BCP69L-XX-AA3-F-R |
BC817
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4
QW-R206-025.B
T Y PICAL CHARACT ERIS T ICS (c ont.)
1
10
100
1000
0
100
200
300
400
500
V
CE
= 10V
G
F
(
Gain Bandwidth Product vs Collector Current
SOT-23
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
Power Dissipation vs Ambient Temperature
P
D
Collector Current, I
C
(mA)
Temperature (
)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相關(guān)PDF資料 |
PDF描述 |
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| BCP69-XX-AA3-F-R | NPN GENERAL PURPOSE AMPLIFIER |
| BC817 | 45 V, 500 mA NPN general-purpose transistors |
| BC818F | NPN Silicon Transistor (High current application Switching application) |
| BC846BPN | 65 V, 100 mA NPN-PNP general-purpose transistor |
| BC846BS | 65 V, 100 mA NPN-NPN general-purpose transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCP69L-XX-AA3-R | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:PNP MEDIUM POWER TRANSISTOR |
| BCP69T/R | 制造商:NXP Semiconductors 功能描述: |
| BCP69T1 | 功能描述:兩極晶體管 - BJT 1A 20V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCP69T1/D | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:PNP Epitaxial Transistor |
| BCP69T1G | 功能描述:兩極晶體管 - BJT 1A 20V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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