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參數(shù)資料
| 型號： | BCP69-XX-AA3-F-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 中文描述： | npn型通用放大器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | BCP69-XX-AA3-F-R |
BC817
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-025.B
ABS OLUT E MAX IMUM RAT ING
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
V
CEO
V
CES
V
EBO
I
C
RATINGS
45
50
5.0
1.5
350
2.8
150
-40 ~ +150
UNIT
V
V
V
A
mW
mW/
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Derate above 25
°
C
Junction Temperature
Storage Temperature
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0
and assured by design from –20
~+85
.
P
D
T
J
T
STG
~+70
operating temperature range
T HERMAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
CHARACTERISTIC
SYMBOL
θ
JA
RATING (Note)
350
UNIT
°
C/W
Thermal Resistance, Junction to Ambient
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
C
=10mA, I
B
=0
I
C
=100
μ
A,I
E
=0
I
E
=10
μ
A, Ic=0
V
CB
=20V
V
CB
=20V,T
a
=150
°
C
45
50
5
V
V
V
nA
μ
A
Collector-Cutoff Current
I
CBO
100
5
ON CHARACTERISTICS
h
FE1
*
h
FE2
V
CE(SAT)
V
BE(ON)
Ic=100mA,V
CE
=1.0V See Classification
Ic=500mA, V
CE
=1.0V
Ic=500mA,I
B
=50Ma
Ic=500mA, V
CE
=1.0V
DC Current Gain
40
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.7
1.2
V
V
CLAS S IFICAT ION OF hFE1*
RANK
RANGE
BC817-16
100-250
BC817-25
160-400
BC817-40
250-600
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