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參數(shù)資料
| 型號(hào)： | BCP53-10T3 |
| 英文描述： | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | SOT-223 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 80V的五（巴西）總裁| 1.5AI（丙）|的SOT - 223 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | BCP53-10T3 |
BCP53T1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100
μ
Adc, IE = 0)
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector-Emitter Breakdown Voltage (IC = –100
μ
Adc, RBE = 1.0 kohm)
Emitter-Base Breakdown Voltage (IE = –10
μ
Adc, IC = 0)
Collector-Base Cutoff Current (VCB = –30 Vdc, IE = 0)
Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CBO
V(BR)CEO
V(BR)CER
V(BR)EBO
ICBO
IEBO
–100
–
–
Vdc
–80
–
–
Vdc
–100
–
–
Vdc
–5.0
–
–
Vdc
–
–
–100
nAdc
–
–
–10
μ
Adc
DC Current Gain (IC = –5.0 mAdc, VCE = –2.0 Vdc) All Part Types
(IC = –150 mAdc, VCE = –2.0 Vdc)
BCP53T1
BCP53–10T1
BCP53–16T1
(IC = –500 mAdc, VCE = –2.0 Vdc) All Part Types
hFE
25
40
63
100
25
–
–
–
–
–
–
250
160
250
–
–
Collector-Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc)
Base-Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc)
DYNAMIC CHARACTERISTICS
VCE(sat)
VBE(on)
–
–
–0.5
Vdc
–
–
–1.0
Vdc
Current-Gain – Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 35 MHz)
fT
–
50
–
MHz
TYPICAL ELECTRICAL CHARACTERISTICS
500
200
100
50
201
3
5
10
30
50
100
300 500
1000
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
h
F
IC, COLLECTOR CURRENT (mA)
Figure 2. Current Gain Bandwidth Product
f
T
1000
1
10
100
500
300
100
20
50
IC, COLLECTOR CURRENT (mA)
Figure 3. Saturation and “ON” Voltages
V
1000
1
1
0.8
0.6
0.4
0
0.2
100
10
120
110
100
90
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
6
4
2
0
V, VOLTAGE (VOLTS)
Figure 4. Capacitances
C
VCE = 2 V
VCE = 2 V
V(BE)sat @ IC/IB = 10
V(BE)on @ VCE = 2 V
V(CE)sat @ IC/IB = 10
Cib
Cob
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