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參數(shù)資料
| 型號(hào)： | BC859W |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | High Speed CMOS Logic Quad Bilateral Switches 14-SOIC -55 to 125 |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BC859W |
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859W; BC860W
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
4D
4B
4C
TYPE
NUMBER
MARKING
CODE
4H
4F
4G
BC859W
BC859BW
BC859CW
BC860W
BC860BW
BC860CW
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BC859W
BC860W
collector-emitter voltage
BC859W
BC860W
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
30
50
V
V
V
CEO
open base
65
65
30
45
5
100
200
200
200
+150
150
+150
V
V
V
mA
mA
mA
mW
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
≤
25
°
C; note 1
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