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參數(shù)資料
| 型號： | BC859W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Speed CMOS Logic Quad Bilateral Switches 14-PDIP -55 to 125 |
| 中文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | BC859W |
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BC859W; BC860W
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
15
4
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
2 mA; V
CE
=
5 V;
see Figs 2 and 3
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC859W; BC860W
BC859BW; BC860BW
BC859CW; BC860CW
collector-emitter saturation
voltage
220
220
420
600
100
10
800
475
800
300
650
750
820
5
4
V
CEsat
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA; note 1
I
C
=
2 mA; V
CE
=
5 V
I
C
=
10 mA; V
CE
=
5 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
500 mV; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 10 Hz to 15.7 kHz
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
pF
pF
MHz
dB
V
BE
base-emitter voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
4
dB
相關(guān)PDF資料 |
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| BC859W | High Speed CMOS Logic Quad Bilateral Switches 14-SOIC -55 to 125 |
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