參數(shù)資料
型號： BC858BW-7
廠商： DIODES INC
元件分類： 功率晶體管
英文描述： PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
中文描述： 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 184K
代理商： BC858BW-7
1
) Tested with pulses t
p
= 300 s, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis 2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
01.11.2003
17
General Purpose Transistors
BC 856W ... BC 860W
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector saturation volt. – Kollektor-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base saturation voltage – Basis-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 30 V, T
j
= 150 C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
-V
CEsat
-V
CEsat
–
–
75 mV
250 mV
300 mV
600 mV
- V
BEsat
- V
BEsat
–
–
700 mV
850 mV
–
–
- V
BEon
- V
BEon
600 mV
–
650 mV
–
750 mV
820 mV
- I
CB0
- I
CB0
–
–
–
–
15 nA
4 A
- I
EB0
–
–
100 nA
f
T
100 MHz
–
–
C
CB0
–
10 pF
12 pF
- V
CE
= 5 V, - I
C
= 200 A
R
G
= 2 k , f = 1 kHz,
f = 200 Hz
BC 856W...
BC 858W
BC 859W...
BC860W
BC 859W
BC 860W
F
–
–
10 dB
–
–
4 dB
- V
CE
= 5 V, - I
C
= 200 A
R
G
= 2 k , f = 30...15 kHz
F
F
–
–
–
–
4 dB
4 dB
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
R
thA
620 K/W
2
)
BC 846W ... BC 850W
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstrkungsgruppen pro Typ
BC 856AW = 3A
BC 857AW = 3E
BC 858AW = 3J
BC 856BW = 3B
BC 857BW = 3F
BC 858BW = 3K
BC 859BW = 4B
BC 860BW = 4F
BC 857CW = 3G
BC 858CW = 3L
BC 859CW = 4C
BC 860CW = 4G
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC858BW-7-F 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC858BWE6327 制造商:Rochester Electronics LLC 功能描述:- Bulk
BC858BW-E6327 制造商:Siemens 功能描述:100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
BC858BWE6327HTSA1 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP AF 30V SOT-323
BC858BWE6327XT 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 30V 0.1A 3-Pin SOT-323 T/R
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