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參數(shù)資料
| 型號： | BC848-B-AE3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | SWITCHING AND AMPLIFIER APPLICATION |
| 中文描述： | 開關和放大器應用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BC848-B-AE3-R |
BC846-BC850
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-027,C
2 of 4
ABS OLUT E MAX IMUM RAT ING
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
80
50
30
65
45
30
6
UNIT
V
V
V
V
V
V
V
BC846
BC847 / BC850
BC848 / BC849
BC846
BC847 / BC850
BC848 / BC849
BC846 / BC847
BC848 / BC849 /
BC850
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
Emitter-Base Voltage
V
EBO
5
V
Collector Current (DC)
Ic
100
310
200
+150
mA
mW
mW
°
C
°
C
SOT-23
SOT-323
Collector Dissipation
P
D
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
T
J
T
STG
-40 ~ +150
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
I
CBO
h
FE
TEST CONDITIONS
V
CB
=30V, I
E
=0
V
CE
=5.0V, Ic=2.0mA
Ic=10mA,I
B
=0.5mA
Ic=100mA,I
B
=5.0mA
Ic=10mA,I
B
=0.5mA
Ic=100mA,I
B
=5.0mA
V
CE
=5.0V,Ic=2.0mA
V
CE
=5.0V,Ic=10mA
V
CE
=5.0V,Ic=10mA
f=100MHz
V
CB
=10V, I
E
=0, f=1.0MHz
V
EB
=0.5V, I
C
=0, f=1.0MHz
V
CE
=5V, Ic=200
μ
A,
f=1KHz, R
G
=2K
V
CE
=5V, I
C
=200
μ
A,
R
G
=2K
, f=30~15000Hz
MIN
110
580
TYP MAX UNIT
15
800
90
250
200
600
700
900
660
700
720
Collector Cut-Off Current
DC Current Gain
nA
mV
mV
mV
mV
mV
mV
Collector-Emitter Saturation Voltage
V
CE(SAT)
Collector-Base Saturation Voltage
V
BE(SAT)
Base-Emitter On Voltage
V
BE(ON)
Current Gain Bandwidth Product
f
T
300
MHz
Output Capacitance
Input Capacitance
Cob
Cib
3.5
9
2
1.2
1.4
1.4
6
10
4
4
3
pF
pF
dB
dB
dB
dB
BC846/BC847/BC848
BC849/BC850
BC849
BC850
Noise Figure
NF
CLAS S IFICAT ION OF h
FE
RANK
RANGE
A
B
C
110-220
200-450
420-800
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