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參數(shù)資料
| 型號： | BC817-16-AE3-R |
| 廠商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 中文描述： | 1500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | BC817-16-AE3-R |
BC817
NPN EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R206-025.B
ABS OLUT E MAX IMUM RAT ING
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
V
CEO
V
CES
V
EBO
I
C
RATINGS
45
50
5.0
1.5
350
2.8
150
-40 ~ +150
UNIT
V
V
V
A
mW
mW/
°
C
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Power Dissipation
Derate above 25
°
C
Junction Temperature
Storage Temperature
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0
and assured by design from –20
~+85
.
P
D
T
J
T
STG
~+70
operating temperature range
T HERMAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
CHARACTERISTIC
SYMBOL
θ
JA
RATING (Note)
350
UNIT
°
C/W
Thermal Resistance, Junction to Ambient
Note: Device mounted on FR-4 PCB 40mm×40mm×1.5mm.
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
°
C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
C
=10mA, I
B
=0
I
C
=100
μ
A,I
E
=0
I
E
=10
μ
A, Ic=0
V
CB
=20V
V
CB
=20V,T
a
=150
°
C
45
50
5
V
V
V
nA
μ
A
Collector-Cutoff Current
I
CBO
100
5
ON CHARACTERISTICS
h
FE1
*
h
FE2
V
CE(SAT)
V
BE(ON)
Ic=100mA,V
CE
=1.0V See Classification
Ic=500mA, V
CE
=1.0V
Ic=500mA,I
B
=50Ma
Ic=500mA, V
CE
=1.0V
DC Current Gain
40
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.7
1.2
V
V
CLAS S IFICAT ION OF hFE1*
RANK
RANGE
BC817-16
100-250
BC817-25
160-400
BC817-40
250-600
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC817-25-AE3-R | NPN GENERAL PURPOSE AMPLIFIER |
| BC817-40-AE3-R | NPN GENERAL PURPOSE AMPLIFIER |
| BC817L-16-AE3-R | NPN GENERAL PURPOSE AMPLIFIER |
| BC817L-25-AE3-R | NPN GENERAL PURPOSE AMPLIFIER |
| BC817L-40-AE3-R | NPN GENERAL PURPOSE AMPLIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC817-16B5000 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BC817-16B5003 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| BC81716E6327 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 45V 0.5A 3-Pin SOT-23 T/R |
| BC817-16E6327 | 功能描述:兩極晶體管 - BJT NPN 45 V 500 mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC81716E6327XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 45V 0.5A 3-Pin SOT-23 T/R |
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