參數資料
型號: BC808F
廠商: AUK Corp
英文描述: PNP Silicon Transistor (High current application Switching application)
中文描述: 進步黨硅晶體管(高電流應用交換應用)
文件頁數: 2/3頁
文件大?。?/td> 82K
代理商: BC808F
KST-2086-000
2
BC808F
Absolute maximum ratings
(Ta=25
°
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
-30
V
Collector-Emitter voltage
-25
V
Emitter-base voltage
-5
V
Collector current
-800
mA
Collector dissipation
200
mW
°
C
°
C
Junction temperature
150
Storage temperature
-55~ 150
Electrical Characteristics
(Ta=25
°
C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Emitter breakdown voltage
BV
CEO
I
C
= -1mA, I
B
= 0
-25
-
-
V
Base-Emitter Turn On voltage
V
BE(ON)
V
CE
= -1V, I
C
= -300mA
-
-
-1.2
V
Collector-Emitter saturation voltage
V
CE(sat)
I
C
= -500mA, I
B
= -50mA
-
-
-700
mV
Collector cut-off current
I
CBO
V
CB
= -25V, I
E
= 0
-
-
-100
nA
DC current gain
h
FE
*
V
CE
= -1V, I
C
= -100mA
V
= -5V, I
E
= 10mA,
f= 100MHz
V
CB
= -10V, I
E
= 0, f= 1MHz
100
-
630
-
Transition frequency
f
T
-
100
-
MHz
Collector output capacitance
Cob
-
16
-
pF
* : h
FE
rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
相關PDF資料
PDF描述
BC817-16-AE3-R NPN GENERAL PURPOSE AMPLIFIER
BC817-25-AE3-R NPN GENERAL PURPOSE AMPLIFIER
BC817-40-AE3-R NPN GENERAL PURPOSE AMPLIFIER
BC817L-16-AE3-R NPN GENERAL PURPOSE AMPLIFIER
BC817L-25-AE3-R NPN GENERAL PURPOSE AMPLIFIER
相關代理商/技術參數
參數描述
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BC808TA 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2