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參數(shù)資料
| 型號(hào)： | BC808-16W |
| 廠(chǎng)商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 174K |
| 代理商： | BC808-16W |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
4
01.11.2003
1
2
3
Type
Code
2
±
2
±0.1
1
±0.1
1
±
0.3
1.3
BC 807W / BC 808W
General Purpose Transistors
PNP
Surface mount Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
für die Oberflchenmontage
PNP
Power dissipation – Verlustleistung
225 mW
Plastic case
Kunststoffgehuse
SOT-323
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Dimensions / Mae in mm
1 = B
2 = E
3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25 C)
Grenzwerte
(T
A
= 25 C)
BC 807W
BC 808W
Collector-Emitter-voltage
B open
- V
CE0
- V
CES
- V
CB0
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
I
EM
T
j
T
S
45 V
25 V
Collector-Emitter-voltage
B shorted
50 V
30 V
Collector-Base-voltage
E open
50 V
30 V
Emitter-Base-voltage
C open
5 V
Power dissipation – Verlustleistung
225 mW
1
)
Collector current – Kollektorstrom (DC)
500 mA
Peak Coll. current – Kollektor-Spitzenstrom
1000 mA
Peak Base current – Basis-Spitzenstrom
200 mA
Peak Emitter current – Emitter-Spitzenstrom
1000 mA
Junction temperature – Sperrschichttemperatur
150 C
Storage temperature – Lagerungstemperatur
- 65…+ 150 C
Characteristics, T
j
= 25 C
Kennwerte, T
j
= 25 C
Typ.
Min.
Max.
DC current gain – Kollektor-Basis-Stromverhltnis
- V
CE
= 1 V, - I
C
= 100 mA
- V
CE
= 1 V, - I
C
= 500 mA
BC807W
BC808W
h
FE
h
FE
h
FE
h
FE
h
FE
100
–
600
40
–
–
- V
CE
= 1 V, - I
C
= 100 mA
Group -16W
100
160
250
Group -25W
160
250
400
Group -40W
250
400
600
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|---|---|
| BC808-25W | Surface mount Si-Epitaxial PlanarTransistors |
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