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參數(shù)資料
| 型號： | BC547 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (NPN)(小信號晶體管（NPN）) |
| 中文描述： | 小信號晶體管（NPN）的（小信號晶體管（NPN）的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 263K |
| 代理商： | BC547 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
h-Parameters at V
CE
= 5 V, I
C
= 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
–4
2 · 10
–4
3 · 10
–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
k
k
k
μ
S
μ
S
μ
S
–
–
–
DC Current Gain
at V
CE
= 5 V, I
C
= 10
μ
A
Current Gain Group A
B
C
at V
CE
= 5 V, I
C
= 2
mA
Current Gain Group A
B
C
at V
CE
= 5 V, I
C
= 100 mA
Current Gain Group A
B
C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–
–
–
110
200
420
–
–
–
90
150
270
180
290
500
120
200
400
–
–
–
220
450
800
–
–
–
–
–
–
–
–
–
–
–
–
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
250
1)
K/W
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
V
CEsat
V
CEsat
–
–
80
200
200
600
mV
mV
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
at I
C
= 100 mA, I
B
= 5 mA
V
BEsat
V
BEsat
–
–
700
900
–
–
mV
mV
Base-Emitter Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10 mA
V
BE
V
BE
580
–
660
–
700
720
mV
mV
Collector-Emitter Cutoff Current
at V
CE
= 80 V
at V
CE
= 50 V
BC546
BC547
at V
CE
= 30 V
BC548, BC549
at V
CE
= 80 V, T
j
= 125 °C
at V
CE
= 50 V, T
j
= 125 °C
BC546
BC547
I
CES
I
CES
I
CES
I
CES
I
–
–
–
–
–
0.2
0.2
0.2
–
–
15
15
15
4
4
nA
nA
nA
μ
A
μ
A
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
BC546 THRU BC549
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC547 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC547,116 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC547 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN TO-92 |
| BC547/550 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Switching and Applications |
| BC547/E6 | 制造商:Vishay Siliconix 功能描述:TRANS GP BJT NPN 45V 0.1A 3PIN TO-226AA - Tape and Reel |
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