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參數(shù)資料
| 型號： | BAV99-AN3-R |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | HIGH CONDUCTANCE ULTRA FAST DIODE |
| 中文描述： | 高電導(dǎo)超快速二極體 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 107K |
| 代理商： | BAV99-AN3-R |
BAV99
DIODE
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R601-005,B
3 of 4
T Y PICAL CHARACT ERIS T ICS
Reverse Voltage vs. Reverse Current
BV - 1.0 ~ 100 uA
150
150
150
150
150
1
2
3
5
10
20 30
50
100
Reverse Current, I
R
(uA)
R
R
(
Ta = 25
300
250
150
100
0
10
2
3 20
30
50
70
100
Reverse Current vs. Reverse Voltage
I
R
- 10 ~ 100 V
R
R
Reverse Voltage, V
R
(V)
Ta = 25
200
50
GENERAL RULE : The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
485
400
350
300
225
1
2
3
5
10
20 30
50
100
Forward Voltage vs. Forward Current
V
F
- 1.0 ~ 100 uA
Forward Current, I
F
(uA)
F
F
(
Ta = 25
450
250
725
650
600
550
450
0.1
0.2 0.3 0.5
1
2
3
5
10
Forward Voltage vs. Forward Current
V
F
0.1 ~ 10 mA
Forward Current, I
F
(mA)
F
F
(
Ta = 25
700
500
1.5
1.2
1
0.8
0.6
10
20 30
50
100
200300 500
Forward Voltage vs. Forward Current
V
F
- 1.0 ~ 800 mA
Forward Current, I
F
(mA)
F
F
(
Ta = 25
1.4
1.3
1.2
1.1
1
0
2
4
6
8
10
12
15
Capacitance vs. Reverse Voltage
V
R
- 0.0 ~ 15 V
Reverse Voltage (V)
C
14
Ta = 25
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