參數(shù)資料
型號(hào): BAV17-TR
廠商: Vishay Intertechnology,Inc.
英文描述: Small Signal Switching Diodes, High Voltage
中文描述: 小信號(hào)開關(guān)二極管,高壓
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 135K
代理商: BAV17-TR
www.vishay.com
2
Document Number 85543
Rev. 1.6, 20-Apr-06
BAV17 / 18 / 19 / 20 / 21
Vishay Semiconductors
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
R
thJA
T
j
T
stg
Value
300
Unit
K/W
Junction to ambient air
l = 4 mm, T
L
= constant
Junction temperature
175
°C
Storage temperature range
- 65 to + 175
°C
Parameter
Test condition
Part
Symbol
V
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
Min
Typ.
Max
1000
Unit
mV
Forward voltage
I
F
= 100 mA
V
R
= 20 V
V
R
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
T
j
= 100 °C, V
R
= 20 V
T
j
= 100 °C, V
R
= 50 V
T
j
= 100 °C, V
R
= 100V
T
j
= 100 °C, V
R
= 150 V
T
j
= 100 °C, V
R
= 200 V
I
R
= 100
μ
A, t
p
/T = 0.01,
t
p
= 0.3 ms
Reverse current
BAV17
100
nA
BAV18
100
nA
BAV19
100
nA
BAV20
100
nA
BAV21
100
nA
μ
A
μ
A
μ
A
μ
A
μ
A
BAV17
15
BAV18
15
BAV19
15
BAV20
15
BAV21
15
Breakdown voltage
BAV17
25
V
BAV18
V
(BR)
V
(BR)
V
(BR)
V
(BR)
C
D
r
f
t
rr
60
V
BAV19
120
V
BAV20
200
V
BAV21
250
V
Diode capacitance
V
R
= 0, f = 1 MHz
I
F
= 10 mA
I
F
= I
R
= 30 mA,
i
R
= 3 mA,
R
L
= 100
Ω
1.5
pF
Ω
Differential forward resistance
5
Reverse recovery time
50
ns
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