參數(shù)資料
型號(hào): BAT83S-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Diode Small Signal Schottky 60V 0.03A 2-Pin DO-35 Ammo
中文描述: Schottky (Diodes & Rectifiers) 150mA 60 Volt 500mA IFSM
文件頁數(shù): 1/3頁
文件大?。?/td> 73K
代理商: BAT83S-TAP
BAT81S, BAT82S, BAT83S
Vishay Semiconductors
www.vishay.com
Rev. 1.9, 06-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85512
Small Signal Schottky Diode
MECHANICAL DATA
Case:
DO-35
Weight:
approx. 125 mg
Cathode band color:
black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Integrated
discharge
Low capacitance
Low leakage current
Low forward voltage drop
Very low switching time
AEC-Q101 qualified
Material categorization: For definitions of
compliance please see
www.vishay.com/doc99912
protection
ring
against
static
APPLICATIONS
General purpose and switching Schottky barrier diode
HF-detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC/DC converter for notebooks
PARTS TABLE
PART
TYPE
DIFFERENTATION
V
R
= 40 V
V
R
= 50 V
V
R
= 60 V
ORDERING CODE
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
TYPE MARKING
REMARKS
BAT81S
BAT82S
BAT83S
BAT81S-TR or BAT81S-TAP
BAT82S-TR or BAT82S-TAP
BAT83S-TR or BAT83S-TAP
BAT81S
BAT82S
BAT83S
Tape and reel/ammopack
Tape and reel/ammopack
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BAT81S
BAT82S
BAT83S
SYMBOL
V
R
V
R
V
R
I
F
I
FSM
I
FRM
VALUE
40
50
60
30
500
150
UNIT
V
V
V
mA
mA
mA
Reverse voltage
Forward continuous current
Peak forward surge current
Repetitive peak forward current
t
p
10 ms
t
p
1 s
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
I = 4 mm, T
L
= constant
SYMBOL
R
thJA
T
j
T
stg
VALUE
320
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
I
F
= 0.1 mA
SYMBOL
V
F
V
F
V
F
I
R
C
D
MIN.
TYP.
MAX.
330
410
1000
200
1.6
UNIT
mV
mV
mV
nA
pF
Forward voltage
I
F
= 1 mA
I
F
= 15 mA
V
R
= V
Rmax.
V
R
= 1 V, f = 1 MHz
Reverse current
Diode capacitance
相關(guān)PDF資料
PDF描述
BAT81S-TR Diode Small Signal Schottky 40V 0.03A 2-Pin DO-35 T/R
BAT83S Schottky Barrier Diodes
BAT82S Schottky Barrier Diodes
BAT82S Schottky Barrier Diode(反向電壓50V的肖特基勢(shì)壘二極管)
BAT83S Schottky Barrier Diode(反向電壓60V的肖特基勢(shì)壘二極管)
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