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參數(shù)資料
| 型號(hào)： | BAS85-GS08 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Diode Small Signal Schottky 30V 0.2A 2-Pin Mini-MELF SOD-80 T/R |
| 中文描述： | Schottky (Diodes & Rectifiers) 200mA 30 Volt |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | BAS85-GS08 |
BAS85
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 21-Jan-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
2
Document Number: 85510
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 -
Max. Reverse Power Dissipation vs.
Junction Temperature
Fig. 2 -
Reverse Current vs. Junction Temperature
Fig. 3 -
Forward Current vs. Forward Voltage
Fig. 4 -
Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reserve beakdown voltage
Leakage current
TEST CONDITION
I
R
= 10 μA (pulsed)
V
R
= 25 V
Pulse test t
p
< 300 μs,
I
F
= 0.1 mA
Pulse test t
p
< 300 μs, I
F
= 1 mA
Pulse test t
< 300 μs,
I
F
= 10 mA
Pulse test t
< 300 μs,
I
F
= 30 mA
Pulse test t
p
< 300 μs,
I
F
= 100 mA
V
R
= 1 V, f = 1 MHz
I
F
= 10 mA, I
R
= 10 mA,
i
R
= 1 mA
SYMBOL
V
(BR)
I
R
MIN.
30
TYP.
MAX.
UNIT
V
μA
0.2
2
Forward voltage
V
F
240
mV
V
F
320
mV
V
F
400
mV
V
F
500
mV
V
F
800
mV
Diode capacitance
C
D
10
pF
Reserve recovery time
t
rr
5
ns
0
20
40
60
80
100
120
140
160
180
200
25
50
T
j
- J
u
nction Temperat
u
re (°C)
75
100
125
150
15822
V
R
= 30
V
P
R
v
e
w
e
R
thJA
= 540 kW
P
- Limit
at 100 %
V
R
P
- Limit
at 80 %
V
R
0
0.5
1.0
1.5
15824
0.1
1
10
100
1000
T
j
= 125 °C
I
F
w
a
u
r
V
F
- For
w
ard
V
oltage (
V
)
T
j
= 25 °C
1
10
100
1000
25
50
T
j
- J
u
nction Temperat
u
re (°C)
75
100
125
150
15823
V
R
=
V
RRM
I
R
v
e
u
r
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
15825
f = 1 MHz
V
R
- Re
v
erse
V
oltage (
V
)
C
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BAS85-GS18 | 功能描述:肖特基二極管與整流器 30 Volt 200mA 600 mA IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| BAS85-M | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Small Signal Schottky Diode |
| BAS85-M-08 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY DIODES SOD80 MINIMELF-E2-M |
| BAS85-M-18 | 制造商:Vishay Semiconductors 功能描述:SCHOTTKY DIODES SOD80 MINIMELF-E2-M |
| BAS85T | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SILICON SCHOTTKY BARRIER DIODE |
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